Introducere Către Tipuri De Flexibil Solar Celule

Amorf siliciu
The thickness of amorphous silicon (a-Si) flexible batteries is 1/300 of that of crystalline silicon batteries, which can further reduce the cost of raw materials. A breakthrough in amorphous silicon flexible batteries was the proposed triple junction stack battery structure in 1997, which improved conversion efficiency and stability, and achieved a stable conversion efficiency of 8.0 percent to 8.5 percent .
Taking the amorphous silicon flexible battery of United Solar Ovonic Company in the United States as an example, the amorphous silicon triple junction stack battery structure includes three layers of p-n junction absorption layers with different band gaps. The top battery uses amorphous silicon a-Si with a band gap of 1.8 eV to absorb blue light. The intermediate battery uses a silicon germanium alloy a-SiGe with a band gap of 1.6 eV, which absorbs green light and has a Ge content of 10 percent to 15 percent . The silicon germanium alloy a-SiGe with a 1.4 eV band gap for the bottom battery absorbs 40 percent to 50 percent of red and infrared light, with a high content of Ge. After the sunlight passes through the three layers of semiconductor absorption layer in turn, there is still a portion of the light that has not been absorbed. After being reflected by the back reflection layer of Al/ZnO, it returns to the three layers of semiconductor absorption layer and undergoes another absorption process. The back reflection layer plays a light trapping role. In this way, amorphous silicon flexible batteries can more effectively absorb incoming and outgoing light, improve conversion efficiency and output power, and achieve better performance under low incident and scattered light conditions.
As of 2016, only Xunli Solar was producering amorphous silicon flexible thin film batteries and components in China, with a conversion efficiency of 8-10} percent and an overall thickness of only 1.5mm. In product applications, in addition to roll to roll roll flexible thin film components, there are also folding charging packs that expand the application of flexible amorphous silicon.
Cupru indiu galiu seleniu
In the mid-1970s, people began to study copper indium gallium selenium (CIGS) thin film batteries. CIGS thin films belong to chalcopyrite crystals with adjustable band gaps. Due to the requirement of solar cells for a band gap of 1 to 1.7eV, the band gap of CIGS can be adjusted as needed by changing the content of group III cations In, Ga, Al, and group VI anions Se, S. Comparat la amorf siliciu, CIGS cristal has mai puține interne defecte, mai mult stabil performanță, și a modul viață de sus la 25 ani. În timpul the utilizare de modul, the mișcare de cupru ioni can reparație defecte, so the performance of the module will continue to improve, which is in contrast to the photoinduced decay effect or the S-W effect (Staebler Wronskieflect) of amorf siliciu.
Organic
In organic fotovoltaic (OPV) solar celule, the organic semiconductor absorbant mediu este obișnuit compus of a amestec of donator and acceptor materiale. Donor materiale sunt bune at dând electroni, absorbing holes, and având a pozitiv încărcare după amestecare. conjugate polimeri are tipic donator materiale. Acceptor material is good at absorbing electrons and giving holes, and has a negative charge after mixing. Fullerene (C60) is a tipic acceptor material.
Excitoni sunt legați electroni găuri perechi, care sunt stimulați cvasi particule. După ființă stimulat, the electroni and holes separate, but the electron hole pairs still attract each other through the electrostatic Coulomb force, which cant be complete separat due to Coulomb binding, forming excitons. There are two types of excitons, watts
Wannier Mottexcition and Frenkel exciton. Varni model excitons exist in cristalin siliciu semiconductori, unde electroni excitati in the conduction band and holes in the valence band form bound states, with a weak Coulomb force of about {{{0}}}}.01 eV. Frenkel excitons exist in donor materials in organic media, and the Coulomb force between them is strong, around 0.3 eV